Description
- Growth method VGF
- Orientation (111)B ± 0.5 Deg
- Orientation Flats (1-10) (001)
- Doping Undoped
- Conductivity type N type
- Carrier Concentration (1-3)E16 / cm-3
- Mobility >20000 cm2/V.S
- EPD <15000 / cm 2
- Resistivity: 1.3x10^-2 ohm.cm
- Standard thickness 500 ± 25 mm
- Standard diameter 50.8± 0.5mm
- Polish one side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|