Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10x0.5mm
- Polishing: one side polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
- Mobility: 2170-2650 cm^2/V.S
- EPD: <5000/cm^2
- Resistivity: (2.56-3.55)x10^-3 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
