Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

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Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm
  • Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm
Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

SKU: thermal-oxide-wafer-300nm-sio2-layer-on-si-100100mm-diax0-5-mm-t-p-type-1sp-r-0-001-0-005-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm   ( 3000A)  +/-10% Refractive index - 1.455 Silicon Wafer

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

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Dicing saw

Film Coater