Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 100mm Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          P-type/ B-doped 
• Resistivity:                  R:0.001-0.005ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         100mm+/- 0.5 mm x 0.5 mm
• Orientation:                (100) +/- 0.5^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

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