Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001

Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001

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Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001
  • Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001
Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001

Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001

SKU: thermal-oxide-wafer-300nm-sio2-layer-on-si-100-4dia-x-0-5mm-t-n-type-sb-doped-1sp-r-0-01-0-02-ohm-cm-fm300soonsisba101d0525c1r001

Price: RFQ

Description

Thermal oxide Layer

  • Research Grade, about 80% useful area
  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 300 nm (3000A)  +/-10%
  • Refractive index - 1.455 Silicon Wafer

 

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