Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

Thermal oxide Layer

• Research Grade, about 80% useful area
  
• SiO2 layer on 4"Silicon wafer
• Oxide layer thickness: 300 nm (3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:      N-type/ Sb-dped 
• Resistivity:                0.01-  0.02 ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         4" +/- 0.5 mm x 0.525 mmth
• Orientation:                (111) +/- 0.5^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

• Optional:  you may need tool below to handle the wafer ( click picture to order )

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