Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

RM0.00 MYR
RM0.00 MYR
Skip to product information
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
  • Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

SKU: silicon-on-sapphire-11-02-r-plane-5mmx-5mmx0-46-mm-2sp-film-0-6um-thick

Price: RFQ

Description

 Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al 2 O 3 ) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation . Materials: Silicon on Sapphire Silicon EPI Layer : Silicon Orientation: (100) Type, Dopant:  Intrinsic type, undoped Silicon Thickness:0.6 um +/- 10% Resistivity: > 100 ohm.cm Micro-particle density ( for particles > 2 um) < 2/cm^2 Sapphire Wafer: R plane -- (1-102)  with  single flat Wafer size: 5x5 x 0.46 mm thickness Front surface: Epi-polished (Ra < 4 nm) Back surface: Optical grade polish TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um Related Products Thin Films  A-Z Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater