Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick

Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick

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Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick
  • Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick
Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick

Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick

SKU: silicon-on-sapphire-11-02-r-plane-10mm-x-10mm-x-0-46mm-2sp-film-0-5-um-thick

Price: RFQ

Description

 Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al 2 O 3 ) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation . Materials: Silicon on Sapphire Silicon EPI Layer : Silicon Orientation: (100) Type, Dopant:  Intrinsic type, undoped Silicon Thickness: 0.5 um +/- 10% Resistivity: > 100 ohm.cm Micro-particle density ( for particles > 2 um) < 2/cm^2 Sapphire Wafer: R plane -- (1-102)  with  single flat Wafer size: 10x10 x 0.46 mm thickness Front surface: Epi-polished (Ra < = 4 nm) Back surface: Optical grade polish TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um Related Products Thin Films  A-Z Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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