Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

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Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

SKU: si-wafer-111with-4-deg-off-4-dia-x-0-525-mm-1sp-n-type-p-doped-resistivity-1-10-ohm-cm

Price: RFQ

Description

Single crystal               Si,    (CZ) Conductivity:               N type ( P doped) Resistivity:                  1-10 ohm-cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Size:                            4" diameter x 0.525 mm Orientation:                 (111)with 4 deg. off, Polish:                         One side polished Surface roughness:       < 5A Optional:  you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate - DS-01 Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001 Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C Single Wafer Containers

Diamond Scriber for Cutting Single Crystal Substrate - DS-01

Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

Single Wafer Containers