Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

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RM0.00 MYR
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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001
  • Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001
Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

SKU: si-wafer-111-with-4-deg-off-prime-grade-4-dia-x-0-5-mm-1sp-n-type-as-doped-resistivity-0-001-0-005-ohm-cm-siasc101d05c1deg4r0001

Price: RFQ

Description
Specifications:
  • Single crystal           Si, (CZ) (Prime Grade)
  • Conductivity:            N type ( As doped)
  • Resistivity:               0.001~0.005 ohm-cm  (If you would like to measure the resistivity accurately, 
                                   please order our Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                        4" in diameter x 0.525 mm
  • Orientation:               4 degree off  (111)   +/- 0.5 deg
  • Polish:                      one side polished
  • Surface roughness:    < 5A, RMS



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