Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-20 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-20 ohm-cm

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Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-20 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-20 ohm-cm

SKU: si-wafer-111-4-0-5-degree-off-4-dia-x-0-525-mm-1sp-p-type-b-doped-resistivities-1-10-ohm-cm

Price: RFQ

Description

  • Single crystal               Si,   
  • Conductivity:               P type ( B doped)
  • Resistivity:                1-20 ohm-cm   (If you would like to measure the resistivity accurately, 
                                        please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                            4" diameter x 0.525 mm
  • Orientation:                 (111)  4 +/- 0.5 degree off
  • Polish:                          One side polished
  • Surface roughness:       < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )