Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

• Single Crystal:               Si   
• Growth Method:            CZ
• Type/Dopant:                P/Boron
• Orientation:                  (100) 
• Resistivity:                    0.5 - 2.0 ohm-cm  (If you would like to measure the resistivity accurately, 
                                           please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Diameter:                     100 mm
• Thickness:                    0.275 mm +/- 0.020 mm
• Primary Flat:                 <110>  
• Polish:                          One side polished
• Minority-Carrier Lifetime:  100 us

Optional:  you may need tool below to handle the wafer ( click picture to order )