Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

• Single crystal                 Si
• Conductivity:                N type  ( P doped)
• Resistivity:                   10-30ohm-CM
• Size:                                3" diameter x  0.5  mm
• Orientation:                  (100)  4 Deg. Off Toward  (110)
• Polish:                           One side polished
• Surface roughness:      < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )