Description
2" InSb wafer (N type, undoped)
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Size: 2" dia x 0.5mm thick
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Orientation: <100> +/-0.5o with two reference flats
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Polishing: one-side side polished ( back side etched )
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Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
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Growth method: LEC
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Orientation: (100) +/- 0.5o
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Orientation Flat: <110>.<110>
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Doping: Undoped
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Conductivity type: N type
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Carrier Concentration: <1E15@77K
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Mobility: >4E5 cm^2/ v.s
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EPD: <300cm^-2
Other GaAs |
InSb
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Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
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