InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

 InSb   substrate 10x10x0.5 mm   (N type, undoped)

• Size:10x10x0.5 mm
• Orientation:<100> +/-0.5^o 
• Polishing: one-side side polished ( back side etched )
• Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method: LEC
• Orientation: (100)  +/- 0.5^o                                     
• Doping:  Undoped
• Conductivity type: N type
• Carrier Concentration: <1E15 @77K
• Mobility: (5.0-3.5)E5 cm²/Vs
• EPD: <200 / cm ²

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