Description
10x10x0.45 mm InSb wafer (P type, Ge doped)
- Size: 10x10x0.45 mm
- Orientation: <100> +/-0.5 o with two reference flats
- Polishing: two sides polishd
- Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
- Properties Growth method: LEC
- Orientation: (100) +/- 0.5 o
- Orientation Flat: N/A
- Doping: Ge
- Conductivity type: P Type
- Carrier Concentration: 1.35x10^15/cc @77K
- Mobility: 6300 cm 2 /Vs
- EPD: <=200 / cm 2
- Resistivity: 7.34E-1 ohm.cm
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
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Film Coaters
|
RTP Furnaces
|