Description
InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.5 mm
- Doping: S- doped
- Conducting type: S-C-N
- Polish: one side polished
- Resistivity: (0.87-1.19)x10^-3 ohm.cm
- Mobility: 1400-1670 cmE2/V.S
- EPD: N/A
- Carrier Concentration: (3.15-5.15) x10^18 /cm^3
- Surface Roughness: <4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
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RTP Furnaces
|