Description
InP single crystal wafer
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Orientation: (100)+/- 0.5 degree
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Primary Flat: US(01-1)+/-0.5 degree
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Secondary Flat: US(011)
- Size: 3" diameter x 0.625 mm
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Growing Method: VGF
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Doping: Zn doped
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Conducting type: S-C
- Polish: one side polished
- Resistivity: (4.19-4.73)E-2 ohm.cm
- Mobility: 72-74 cmE2/V.S
- EPD: <5000 /cmE2
- Carrier Concentration: (1.79-2.07)E18 /cmE-3
- Ra(Average Roughness): < 0.4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|