Description
- Growth method: LEC
- Orientation: (111)A ± 0.5 Deg
- Orientation Flat: SEMI
- Doping: Undoped
- Conductivity type: N type
- Carrier Concentration: <2E16 / cm-3
- Mobility: >23400 cm2/V.S
- EPD: <10000 / cm 2
- Resistivity: 1.3x10^-2 ohm.cm
- Standard thickness: 450 ± 25 mm
- Standard diameter: 2"± 0.4mm
- Polish: one-side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|