Description
2" InAs wafer (Ntype)
- 2" InAs wafer: (Undoped, N type)
- Size: 2" dia x 500 micron +/-25 microns
- Orientation: <100> +/-0.50
- Polishing: one-side polishd
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method: LEC
- Orientation: (100) +/- 0.5 o
- Doping: undoped
- Conductivity type: N type
- Carrier Concentration: (1-3.0) x10^16/ cm3
- Mobility: ~20000 cm 2/Vs
- Resistivity: >=1.0x10^-4 ohm.cm
- EPD: <10000 / cm 2
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
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RTP Furnaces
|