Description
2" InAs wafer (Ntype)
-
2" InAs wafer: (Undoped, N type)
-
Size: 2" dia x 500 microns +/-25 microns
-
Orientation: <100> +/-0.50
-
Polishing: two sides polished
-
Growth Method: LEC
-
Major Flat Orientation: <1-10>
-
Minor Flat Orientation: <0-11>
-
Mobility: (18000-20000) cm^2/V.s
-
Carrier Concentration: < 3 E16 cm^-3
-
EPD: <5000 /cm^2
-
Packing: in 1000 class clean room with wafer container
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|