InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5

2" InAs wafer (P type)

• 2" InAs wafer    
• P Type, Zn doped
• Size: 2" dia x0.5 mm +/-20 microns
• Orientation: <100> +/-0.5⁰
•  Polishing: one-side polishd
• Packing: in 1000 class clean room with wafer container

Properties

• Growth method:  LEC
• Orientation: (100)  +/- 0.5 ^o
• Orientation Flat: <110><-110>              
• Doping: Zn doped
• Conductivity type:  P type
• Carrier Concentration: (3-7)E17/ cm³
• Mobility: 100-500 cm²/V.S  
• EPD: <10000 / cm ²

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coaters

RTP Furnaces