Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Specification

• Growing Method:             CZ
• Orientation:                     (111) +/_0.5 Deg.
• Wafer Size:                      2" dia x  0.5 mm  
• Surface Finish(RMS or Ra):   Double side epi polished < 8 A ( by AFM)
• Doping:                           Undoped
• Conductor type:               N-type
• Resistivity:                       >50  Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                           under 1000 class clean room     

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

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