Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

RM0.00 MYR
RM0.00 MYR
Skip to product information
Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
  • Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

SKU: ge-wafer-undoped-110-3-dia-x-0-5-mm-1-side-polished-resistivity-50-ohm-cm

Price: RFQ

Description

Ge Wafer Specification

  • Growing Method: CZ
  • Orientation: (110) +/_0.5 Deg.
  • Wafer Size: 3" dia x  0.5 mm 
  • Surface Polishing: one side optical polished
  • Surface finish (RMS or Ra) :  < 30A
  • Doping: Undoped
  • Conductor type: N-type
  • Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
  • Package: under 1000 class clean room

 

Zn Target, >99.95% 75 mm diax5.0mm - TGTZn75D50T

Quartz single crystal, optical grade Z-cut, 10x10x1.0mm, 1 sp - SOZ101010S1

Precision CNC Dicing / Dicing Saw with Digital Controller and Complete Accessories - SYJ800

Target  A-Z

Crystal Substrate A-Z

Plasma/UO Cleaner

Round Wafer Carriers

Cutting/Dicing Saws

Film Coaters