Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US

Specification

• Growing Method:                   CZ
• Orientation:                           (110) +/_0.5 Deg.
• Wafer Size:                           2" dia x  500 microns  
• Surface Polishing:                  both sides optical polished
• Surface finish (RMS or Ra) :    < 30A
• Doping:                                 Undoped
• Conductor type:                     N-type
• Resistivity:                             > 50Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                           under 1000 class clean room     

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters