Description
Specifications
- Growing Method: CZ
- Wafer Size: 5x5x0.5 mm
- Surface Polishing: one side epi polished
- Orientation: (111)
- Surface roughness: < 8 A ( by AFM)
- Doping: Ga-doped
- Conductor type: P-type
- Resistivity: 0.005-0.01 Ohms/cm
- EPD: N/A
- Package: under 1000 class clean room in wafer container


