Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

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RM0.00 MYR
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Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
  • Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

SKU: ge-substrate-111-5-x-5-x-0-5-mm-1-sp-p-type-ga-doped-r-0-005-0-01-ohm-cm-1

Price: RFQ

Description

Specifications

  • Growing Method: CZ
  • Wafer Size: 5x5x0.5 mm
  • Surface Polishing: one side epi polished
  • Orientation: (111)
  • Surface roughness: < 8 A ( by AFM)
  • Doping: Ga-doped
  • Conductor type: P-type
  • Resistivity: 0.005-0.01 Ohms/cm
  • EPD: N/A
  • Package: under 1000 class clean room  in wafer container     


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