Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

Ge Wafer Specification

• Growing Method: CZ
• Wafer Size: 10 x 3 x0.5 mm
• Surface Polishing: two sides epi polished
• Orientation: (100)+/- 2 degree
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
• Doping: Ga doped
• Conductor type: P-type
• Resistivity: 10-15 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

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