Description
Ge Wafer Specification
- Growing Method: CZ
- Wafer Size: 10 x 10 x0.45 mm
- Surface Polishing: one side epi polished
- Orientation: (100)
- Surface roughness: RMS or Ra:~ 10 A(By AFM)
- Doping: Sb doped
- Conductor type: N-type
- Resistivity: <0.009 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
- Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
