Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm

Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm

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Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm
  • Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm
Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm

Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm

SKU: ge-single-crystal-substrate-n-type-sb-doped-100-10x10x0-45mm-1sp-r-0-009ohm-cm

Price: RFQ

Description

 Ge Wafer Specification Growing Method:            CZ Wafer Size:                    10 x 10 x0.45 mm Surface Polishing:          one side epi polished Orientation:                    (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping:                          Sb doped Conductor type:             N-type Resistivity:                     <0.009 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Package:                       under 1000 class clean room  in wafer container Related Product Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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Plasma Cleaner

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Dicing saw

Film Coater