GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

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GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1
  • GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1
GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

SKU: gasb-wafer-100-undoped-10x10x0-5-mm-1sp-gsua101005s1

Price: RFQ

Description

 Wafer Specifications:. Size:                      10x10 x 0.5mm, Orientation:          (100) Dopping:              undoped, Conducting type: P-type. Polish:                   one side polished by CMP Packing:               1000 class clean room in a single wafer container Typical Properties Crystal Structure:                                cubic a = 6.095 Å Density: 5.619 g/cm 3 Melting point: 710 o C Grown by a special LEC technique , EPD :<10^4/cm 2 . Carrier concentration:                   ( 1-2)x10^17 cm^-3 Mobility:                                         600-700 cm^2/Vs EPD                                               <3000 cm^-2 Thermal Expansion: 6.1 x 10 -6 /oK Thermal conductivity: 270 mW / cm.k at 300K Dopant Type Carrier Concentration ( cm -3 ) Mobility ( cm 2 /V.Sec) Resistivity ( ohm-cm ) EPD (cm -2 ) Undoped P 1.0~2.0 x 10 17 600 ~ 800 ~0.1 <10000 Zn P + 2.0~5.0 x 10 18 300 ~ 500 ~0.004 <10000 Te N 2.0~6.0 x 10 17 2500 ~ 3500 ~0.05 <10000 High Resistivity P or N 1.0~2.0 x 10 16 460 ~ 1.0 <10000 Related Product Other GaSb InAs InP GaAs InSb Wafer Box Film Coater RTP Furnaces

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000

,
Other GaSb

 		InAs

 InP 

 GaAs


 		InSb

 Wafer Box

 Film Coater

 RTP Furnaces