GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

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GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

Name: GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3
Brand: MTI
SKU: GSTea50D045C1US
Availability: OutOfStock

SKU: gasb-100-n-type-te-doped-2d-x0-5mm-wafer-1sp-carrier-concentration-1-8x10-17-cm-3

Price: RFQ

Description

High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0.5mm, Orientation: (100) Flats: SEMI Dopping: Te doped, Conducting type: N-type. Mobility:2000-3500 cm^2/V.s Carrier Concentration: (1-8)x10^17 cm^-3 Polish: one side polished. Grown by a special LEC technique , EPD :<1000/cm 2 We also provide high resistivity N and P type GaSb wafers. Surface finish (Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6.095 Å Density: 5.619 g/cm 3 Melting point: 710 o C Thermal Expansion: 6.1 x 10 -6 /oK Thermal conductivity: 270 mW / cm.k at 300K Dopant Type Carrier Concentration ( cm -3 ) Mobility ( cm 2 /V.Sec) Resistivity ( ohm-cm ) EPD (cm -2 ) Undoped P 1.0~2.0 x 10 17 600 ~ 800 ~0.1 <10000 Zn P + 2.0~5.0 x 10 18 300 ~ 500 ~0.004 <10000 Te N 2.0~6.0 x 10 17 2500 ~ 3500 ~0.05 <10000 High Resistivity P or N 1.0~2.0 x 10 16 460 ~ 1.0 <10000

Dopant	Type	Carrier Concentration ( cm^-3)	Mobility ( cm²/V.Sec)	Resistivity ( ohm-cm )	EPD (cm^-2)
Undoped	P	1.0~2.0 x 10¹⁷	600 ~ 800	~0.1	<10000
Zn	P⁺	2.0~5.0 x 10¹⁸	300 ~ 500	~0.004	<10000
Te	N	2.0~6.0 x 10¹⁷	2500 ~ 3500	~0.05	<10000
High Resistivity	P or N	1.0~2.0 x 10¹⁶	460	~ 1.0	<10000

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GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

Description

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