Description
High quality GaSb single crystal wafers for semiconductor industries.
- Size: 2" diameter x 0.5mm,
- Orientation: (100)
- Flats: SEMI
- Dopping: Te doped,
- Conducting type: N-type.
- Mobility:2000-3500 cm^2/V.s
- Carrier Concentration: (1-8)x10^17 cm^-3
- Polish: one side polished.
- Grown by a special LEC technique , EPD :<1000/cm2
- We also provide high resistivity N and P type GaSb wafers.
- Surface finish (Ra) : < 5A
Typical Properties
Crystal Structure: cubic a = 6.095 Å
Density: 5.619 g/cm3
Melting point: 710 oC
Thermal Expansion: 6.1 x 10 -6 /oK
Thermal conductivity: 270 mW / cm.k at 300K
Crystal Structure: cubic a = 6.095 Å
Density: 5.619 g/cm3
Melting point: 710 oC
Thermal Expansion: 6.1 x 10 -6 /oK
Thermal conductivity: 270 mW / cm.k at 300K
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
2.0~5.0 x 1018 |
300 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<10000 |
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|