Description
Specifications:
- GaP single crystal wafer
- Doping: Zn-doped
- Type of conductivity: P-type
- Size: 2" diameter x 0.45mm
- Orientation: (111)B
- Polished: one side polished
- Resistivity:4.2E-1 ohm.cm
- Mobility: 70 cmE2/Vs
- Carrier Concentration:2.1E17cmE-3
- EPD: 2.6E4 cmE-2
- Surface finish (RMS or Ra) : < 8A
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