Description
Typical Physical Properties |
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Crystal Structure |
Cubic. |
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Growth Method |
CZ (LEC) |
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Density |
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Mobility: |
150cmE2/Vs |
|
Thermal Expansion |
|
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Dopant |
undoped |
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Crystal growth axis |
<111> |
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Conducting Type |
N |
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Carrier Concentration |
2.7 x1016 /cm3 |
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Resistivity |
1.53 ohm.cm |
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EPD |
3.4x104 |
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