GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

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GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2
  • GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

SKU: gap-wafer-undoped-111-10x10x0-35-mm-2sp-gpuc1010035s2

Price: RFQ

Description

 GaP single crystal wafer, Size: 10mm x 10 mm x 0.35 mm, Doping: undoped, Conducting type: N-type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) : : < 8A price is for one piece Typical Physical Properties Crystal Structure Cubic.            a =5.4505 Å Growth Method CZ (LEC) Density 4.13  g/cm 3 Melt Point 1480 o C Thermal Expansion 5.3 x10 -6 / o C Dopant S doped undoped Crystal growth axis <111>  or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x10 17 /cm 3 4 ~ 6 x10 16 /cm 3 Resistivity ~ 0.03 W-cm ~ 0.3 W-cm EPD < 3x10 5 < 3x10 5 Related Product Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 Å

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105
,

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater