Description
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
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Sizes 2” Round
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Dimensions 50.8mm +/- 0.25mm
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Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
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Substrate Sapphirethickness: 0.43mm+/-0.025mm
Conduction Type: N-type, -
Resistivity < 0.5 Ohm-cm
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Front Surface Finish (Ga Face) As-grown
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Back Surface Finish Sapphire as-received finish
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Useable Surface Area >90%
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Edge Exclusion Area 1mm
Dislocation Density: <5x10^8 cm^−2
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Package Single Wafer Container
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GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
- Please click here to see RMS of GaN template
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