GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

RM0.00 MYR
RM0.00 MYR
Skip to product information
GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5
  • GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5
  • GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5
  • GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5
GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

SKU: gan-single-crystal-substrate-0001-semi-insulating-10x10x0-475-mm-1sp-production-grade-ganc10100475s1semibus5

Price: RFQ

Description

 GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Other Sapphire

GaN

 AlN template 

 ZnO

A-plane (11-20)

Diamond Scriber

Vacuum Pen

Wafer Containers

Film Coaters