GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

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GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP
  • GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-2d-x0-5-mm-1sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                      (100)+/-0.5 degree Size:                                2" dia x 0.5mm Polishing:                         single  side  polished Doping:                            un- doped Conductor type:                Semi-insulating Ra(Average Roughness) :   < 0.4 nm Mobility:                           4470-6540 cm^2/V.S Resistivity: (0.96-5.34) x 10^8 ohm.cm EPD:                               <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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