GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP

GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP

RM0.00 MYR
Sale price  RM0.00 MYR Regular price 
Skip to product information
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP

GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-100mm-d-x0-6-mm-1sp

Price: RFQ

Description

GaAs single crystal wafer Growing Method: VGF Orientation:                        (100) Flat:                                   (01-1)  .(011) Size:                                 100 mm  dia x 0.6mm Polishing:                           one side polished Ra(Average Roughness) :    < 0.4 nm Doping:                              undoped Conductor type:                  Semi-Insulating Resistivity:                         (0.39-4.75) E8 Ohm.cm Mobility:                             4120-6820 cm^2/v.s. EPD:                                 <5000 /cm 2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


InSb

Other InAs

 InP 


GaSb

Wafer Box

Film Coater

RTP Furnaces