GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-100mm-d-x-0-6-mm-2sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                        (100) Flat:                                   (01-1) .(011) Size:                                 100mm dia x 0.6mm Polishing:                           two sides polished Ra(Average Roughness) :    < 0.4 nm Doping:                              undoped Conductor type:                  Semi-Insulating Resistivity:                         (1.41-4.4) E8 Ohm.cm Mobility:                            3240-6000 cm 2 / v.s. EPD:                                 <5000 /cm 2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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