GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-100mm-d-x-0-6-mm-2sp

Price: RFQ

Description

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100) 
  • Flat: (01-1) .(011)
  • Size: 100mm dia x 0.6mm 
  • Polishing: two sides polished
  • Ra(Average Roughness): < 0.4 nm
  • Doping: undoped
  • Conductor type: Semi-Insulating
  • Resistivity: (1.41-4.4)E8 Ohm.cm
  • Mobility: 3240-6000 cm2 / v.s.
  • EPD: <5000/cm2
  • EPI ready surface and packing