GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

RM0.00 MYR

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

Name: GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
Brand: MTI
SKU: GASia100D06C2US5
Availability: OutOfStock

SKU: gaas-growing-method-vgf100-si-doped-n-type-4-dia-x-0-625mm-2sp-carrier-concentration-1-47-3-78-x-10-18-cm-3-gasia100d06c2us5

Price: RFQ

Description

GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 4" dia x 0.625 mm Polishing: two sides polished Doping: Si doped Conductor type: S-C-N Carrier Concentration: (1.47-3.78) x 10^18/cm^3 Mobility: (1600 - 2130) cm^2/V.S Resistivity: (1.03 - 2.01) E-3 ohm.cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0.4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs