GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

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GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
  • GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

SKU: gaas-growing-method-vgf100-si-doped-n-type-4-dia-x-0-625mm-2sp-carrier-concentration-1-47-3-78-x-10-18-cm-3-gasia100d06c2us5

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 4"  dia x 0.625 mm
  • Polishing: two sides polished
  • Doping: Si doped
  • Conductor type: S-C-N
  • Carrier Concentration: (1.47-3.78) x 10^18/cm^3
  • Mobility: (1600 - 2130) cm^2/V.S
  • Resistivity: (1.03 - 2.01) E-3  ohm.cm
  • EPD: < 5000cm^2
  • Ra(Average Roughness): < 0.4 nm
  • EPI ready surface and packing 


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