GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
  • GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

SKU: gaas-growing-method-vgf-100-si-doped-n-type-2-dia-x-0-35mm-2sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                        (100) Size:                                 2" dia x 0.35 mm Polishing:                          Two sides polished Doping:                             Si doped Conductor type:                 N-type Carrier Concentration:       (1.60-3.94) E18 /cm^3 Mobility:                           (1400-2100) cm^2/V.S Resistivity:                       (1.08-1.90) E-3  ohm.cm EPD:                                < 500cm^2 Ra(Average Roughness) :  < 0.4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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