Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Primary Flat: US(0-11); Secondary Flat: US(2-1-1)
- Size: 5 X 5 x 0.5-0.55 mm
- Polishing: One side polished
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity:(1.51-3.86)E8 ohm.cm
- Carrier Concentration: N/A
- Mobility:4120-5860 cm^2/V.S
- EPD: N/A
- Ra(Average Roughness) : < 0.4 nm
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