Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Primary Flat: US(0-11);
- Secondary Flat: US(2-1-1)
- Size: 10X10 x 0.55 mm Polishing: One side polished
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (1.57-3.86)E8 ohm.cm
- Carrier Concentration: N/A
- Mobility: 4120-5860 cm^2/V.S
- EPD: N/A Ra(Average Roughness) : < 0.4 nm
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|