Description
-
GaAs single crystal wafer
-
Growing Method:VGF
-
Orientation: (100)
-
Size: 5x5x0.5mm
-
Polishing:One side polished
-
Doping: undoped
-
Conductor type: SI, Semi-Insulating
-
Resistivity: (0.1-3.24 )x 10^8 Ohm.cm
-
Mobility: 4500-5630 cm^2/V.S
-
EPD: <5000/cm^-2