GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
  • GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

SKU: gaas-100-n-type-te-doped-5-x-5-x-0-35-mm-1sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method:          VGF Orientation:                  (100) Size:                            5 x 5 x 0.35 mm Polishing:                     one  side polished Doping:                        Te doped Conductor type:            N-type Carrier Concentration:   (3.04-5.98) x 10^17 /cm^3 Mobility:                       (3330-3850) cm^2/V.S Resistivity:                  (3.14-5.34) E-3 ohm-cm EPD:                           < 5000 /cm^2 Note:                            EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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 Film Coater

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