Description
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GaAs single crystal wafer
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Growing Method: VGF
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Orientation: (100)
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Size: 5 x 5 x 0.35 mm
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Polishing: one side polished
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Doping: Te doped
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Conductor type: N-type
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Carrier Concentration: (3.04-5.98) x 10^17 /cm^3
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Mobility: (3330-3850) cm^2/V.S
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Resistivity: (3.14-5.34) E-3 ohm-cm
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EPD: < 5000 /cm^2
- Note: EPI polishing
- RMS < 5 Angstrom
