Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

RM0.00 MYR
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Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
  • Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

SKU: cu-film-on-ta-silicon-wafer-cu-100-nm-ta-20nm-si100-b-doped-10x10x0-525mm-r-1-20-ohm-cm-1sp

Price: RFQ

Description

Specifications:

  • Cu coated Si Wafer ( 10x10 mm size )
  • Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
  • Thickness of Ta diffusion barrier: 20-50 nm
  •   0.525 mm thickness Si wafer (Prime Grade)
  • P type, B doped, <100> orientation, SSP
  • Resistivities: 1-20 ohm-cm
  • Surface Roughness:   as grown ,  RA < 10 nm
  • Package: One 1000 class clean room with 100 class plastic bag
  • 10 pcs per package for minimum order



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