Description
Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure. The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes. General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
Specifications:
- Structure: Hexagonal, group 166R-3M
- Grown Method : High-pressure vertical Bridgman
- Lattice constant: a=4.38A c=30.5A
- Substrate orientation: highly oriented layer structure along <0001>
- Surface: as Cleavaged
- Purity: 99.999%, atomic ratio
- Melting Point: 585 oC
- Resistivity : 0.1-5 mohm. cm
- Mobility : 3000 cm2 / V.s
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General Size: irregular shape(~ 10 mm x 10 mm x 0.1mm)
- Packing: packed in plastic bag with vacuum