Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1

Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1

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Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1
  • Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1
Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1

Bi4Ge3O12 - BGO12 (001) 10x10x0.5 mm, 1 side polished - BGO12b101005S1

SKU: bgo12b101005s1

Price: RFQ

Description

 Features : Bi 4 Ge 3 O 12 ( BGO12) is a good scintillation material and has found a wide range of applications in high energy physics, nuclear physics, space physics, nuclear medicine, geological prospecting and other industries. Wafer size: 10 x 10 x 0.5 mm thick Orientation: (001) +/-0.5 o Polished surface : substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 sides polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Structure Cubic Lattice constant a=10.518 A Density (g/cm 3 ) 7.13 Melting point ( o C) 1050 Parameter of crystal cell (A) 10.518 Refractive index 2.15 Radiation length (cm) 1.1 Peak of fluorescence spectra (nm) 480 Decay time (ns) 300 Relative light output (%) 10-14 Nal (Tl) Energy resolution (511 Kev,%) 20

Structure

Cubic

Lattice constant

a=10.518 A

Density (g/cm3)

7.13

Melting point (oC)

1050

Parameter of crystal cell (A)

10.518

Refractive index

2.15

Radiation length (cm)

1.1

Peak of fluorescence spectra (nm)

480

Decay time (ns)

300

Relative light output (%)

10-14 Nal (Tl)

Energy resolution (511 Kev,%)

20