Description
99.996% High Purity, Monocrystalline Al2O3
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Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Orientation: C-axis[0001] ( +-0.5o) with Standard Flat
- Orientation: C-axis[0001] +-0.5o
- Diameter: 100mm +/- 0.1mm
- Thickness: 500um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.5o
- Major Flat Length: 32.5mm +/- 1.5mm
- Surface Finish: Front sides: Epi- polished Ra<0.2nm(by AFM)
- TTV: <= 25um
- Polished surface: One side epi polished by special CMP technology.
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Package: Each wafer is packed in 1000 class clean room .
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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crystal purity: 99.996%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
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Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
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Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
